STG4260BJR datasheet(1/19 Pages) STMICROELECTRONICS

部件名	STG4260BJR

功能描述	Low voltage 0.5 Ω dual SPDT switch with break-before-make feature and 15 kV ESD protection

PDF	19 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 19 page

April 2009

Doc ID 15168 Rev 2

1/19

19

STG4260

Low voltage 0.5

Ω dual SPDT switch with

break-before-make feature and 15 kV ESD protection

Features

■ Wide operating voltage range:

VCC (OPR) = 1.65 to 4.8 V

■ Low power dissipation:

ICC = 0.2 µA (max.) at TA = 85 °C

■ Low "ON" resistance:

–RON = 0.75 Ω (TA = 25 ºC) at

VCC = 2.25 V

–RON = 0.50 Ω (TA = 25 ºC) at

VCC = 3.0 V

–RON =0.40 Ω (TA =25ºC) at

VCC =4.3 V

■ Separate supply voltage for switch and control

■ Latch-up performance exceeds 100 mA per

JESD 78, Class II

■ ESD performance tested on common pin

(D pin):

– 15 kV IEC-61000-4-2 ESD, contact

discharge

– 8 kV HBM JESD22 A114-B Class II

■ ESD performance tested on S1 and S2 pin:

– 8 kV IEC-61000-4-2 ESD, contact

discharge

■ ESD performance test on all other pins:

– 4 kV HBM (JESD22 A114-B Class II)

– 400 V machine model (JESD22 A115-A)

– 1500 V charged-device model

(JESD22 C101)

Applications

■ Mobile phones

Description

The STG4260 is a high-speed CMOS low voltage

dual analog SPDT (single pole dual throw) switch

or 2:1 multiplexer/demultiplexer switch fabricated

in silicon gate C2MOS technology. It is designed

to operate from 1.65 V to 4.8 V, making this device

ideal for portable applications. It offers low ON-

resistance (0.40

Ω typ.) at VCC = 4.3 V. The SEL

inputs are provided to control the switches.

The switch S1 is ON (connected to common port

D) when the SEL input is held high and OFF (high

impedance state exists between the two ports)

when SEL is held low; the switch S2 is ON (it is

connected to common Port D) when the SEL input

is held low and OFF (high impedance state exists

between the two ports) when SEL is held high.

Additional key features are fast switching speed,

break-before-make delay time and ultra low power

consumption. All inputs and outputs are equipped

with protection circuits against static discharge,

giving them ESD immunity and transient excess

voltage.

Flip-chip 12

Table 1.

Device summary

Order code

Package

Packing

STG4260BJR

Flip-chip 12

Tape and reel

www.st.com

类似零件编号 - STG4260BJR

制造商	部件名	数据表	功能描述
STMicroelectronics	STG4210	409Kb / 21P	Low voltage 1 Ω dual SPST analog switch 26-Aug-2008
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	STG4259	311Kb / 19P	Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection 28-Aug-2007
	STG4259BJR	311Kb / 19P	Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection 28-Aug-2007

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类似说明 - STG4260BJR

制造商	部件名	数据表	功能描述
STMicroelectronics	STG3699	274Kb / 12P	LOW VOLTAGE 0.5ΩMAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE 14-May-2004
	STG3680	260Kb / 11P	LOW VOLTAGE 0.5/0.8ΩMAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE May 2004 Rev. 3
	STG3699	371Kb / 12P	LOW VOLTAGE 0.5廓 MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE 04-Jul-2005
	STG3680	531Kb / 11P	LOW VOLTAGE 0.5/0.8Ω MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE 04-Jul-2005
	STG3699B	259Kb / 18P	Low voltage 0.5 廓 max, quad SPDT switch with break-before-make feature 04-Sep-2007
	STG5223	328Kb / 19P	Low voltage 0.5 Ω dual SPDT switch with break-before-make 10-Jan-2008
	STG4158	435Kb / 21P	Low voltage 0.6 Ω typ single SPDT switch with break-before-make feature and 15 kV ESD protection 12-Nov-2007
	STG4259	311Kb / 19P	Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection 28-Aug-2007
	STG3684	562Kb / 11P	LOW VOLTAGE 0.5Ω MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE 04-Jul-2005
	STG4160	711Kb / 19P	Low voltage 0.5 single SPDT switch with break-before-make feature and 15 kV contact ESD protection 15-May-2013

More results

STG4260BJR 数据表(PDF) 1 Page - STMicroelectronics

STG4260BJR 数据表(HTML) 1 Page - STMicroelectronics

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类似零件编号 - STG4260BJR

类似说明 - STG4260BJR

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