IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 340N07

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

V

DS

= 15 V; I

80

105

S

C

iss

16800

pF

C

oss

V

8000

pF

C

rss

4800

pF

t

d(on)

140

ns

t

r

V

95

ns

t

d(off)

R

200

ns

t

f

33

ns

Q

g(on)

600

nC

Q

gs

V

110

nC

Q

gd

300

nC

R

thJC

0.18 K/W

R

thCK

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

I

S

V

340

A

I

SM

Repetitive;

1360

A

pulse width limited by T

JM

V

SD

I

1.2

V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

I

250

ns

Q

RM

1.4

mC

I

RM

8A

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004