MP6759 datasheet(1/6 Pages) TOSHIBA

部件名	MP6759

功能描述	TOSHIBA GTR Module Silicon N Channel IGBT

PDF	6 Pages

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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MP6759

2002-11-20

1

TOSHIBA GTR Module Silicon N Channel IGBT

MP6759

Motor Control Applications

High Power Switching Applications

· The electrodes are isolated from case.

· 6 IGBTs are built into 1 package.

· Enhancement-mode

· Low saturation voltage

: VCE (sat) = 2.7 V (max) (IC = 10 A)

· High speed: tf = 0.35 µs (max) (IC = 10 A)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

VCES

600

V

Gate-emitter voltage

VGES

±20

V

DC

IC

10

Collector current

1 ms

ICP

20

A

DC

IF

10

Forward current

1 ms

IFM

20

A

Collector power dissipation

(Tc = 25°C)

PC

40

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−40 to 125

°C

Isolation voltage

VIsol

2500

(AC 1 minute)

V

Screw torque

―

1.5

N·m

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-78A1A

Weight: 44 g (typ.)

类似零件编号 - MP6759

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Toshiba Semiconductor	MP6750	190Kb / 5P	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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类似说明 - MP6759

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Toshiba Semiconductor	MG150J7KS50	119Kb / 6P	TOSHIBA GTR Module Silicon N Channel IGBT
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	MG150J7KS60	302Kb / 5P	TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
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More results

MP6759 数据表(PDF) 1 Page - Toshiba Semiconductor

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MP6759 数据表(PDF) 1 Page - Toshiba Semiconductor

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类似零件编号 - MP6759

类似说明 - MP6759

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