TSV85X datasheet(9/31 Pages) STMICROELECTRONICS

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TSV85x, TSV85xA

Electrical characteristics

AC performance

GBP

Gain bandwidth product

RL > 1 MΩ, CL = 200 pF

1.3

MHz

Unity gain frequency

Φm

Phase margin

degrees

Gain margin

Slew rate

RL > 1 MΩ, CL = 200 pF

Vout = 0.5 V to VCC - 0.5V

0.7

μs

Equivalent input noise voltage

f = 1 kHz

f = 10 kHz

Equivalent input noise current

f = 1 kHz

0.30

THD+N

Total harmonic distortion + noise

fin = 1 kHz, ACL = 1,

RL = 10 kΩ,

Vicm = Vcc/2, BW = 22 kHz,

Vout = 1 Vpp

0.002

See Section 4.4: Input offset voltage drift over temperature.

Table 6. Electrical characteristics at VCC+ = 5 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 ° C, and RL

connected to VCC/2 (unless otherwise specified) (continued)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

------------

Table 7. Shutdown characteristics VCC = 5 V

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

ICC

Supply current in shutdown

mode (per channel)

SHDN = VCC-

2.5

-40 °C < T< 85 °C

200

-40 °C < T< 125 °C

1.5

µA

ton

Amplifier turn-on time(1)

RL = 2 kΩ,

Vout = VCC- to VCC - + 0.2 V

300

toff

Amplifier turn-off time(1)

RL = 2 kΩ, Vout = VCC+ - 1 V to

VCC+ - 1.2 V

VIH

SHDN logic high

VCC-

0.5

VIL

SHDN logic low

0.5

IIH

SHDN current high

SHDN = VCC+

IIL

SHDN current low

SHDN = VCC-

IOLeak

Output leakage in shutdown

mode

SHDN = VCC-

-40°C < T< 125°C

See Section 4.7: Shutdown function.

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