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SW15P02 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW15P02
功能描述  P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET
PDF  7 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW15P02 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW15P02 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW15P02 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW15P02 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW15P02 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW15P02 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW15P02 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW15P02 Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 3.0
2/7
SW15P02
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=-250uA
-20
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=-250uA, referenced to 25
oC
0.01
V/oC
I
DSS
Drain to source leakage current
V
DS=-20V, VGS=0V
-1
uA
V
DS=-16V, TC=125
oC
-50
uA
I
GSS
Gate to source leakage current, forward
V
GS=-12V, VDS=0V
-100
nA
Gate to source leakage current, reverse
V
GS=12V, VDS=0V
100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=-250uA
-0.5
-0.8
V
R
DS(ON)
Drain to source on state resistance
V
GS=-2.5V, ID=-6A
12
15
m
Ω
V
GS=-4.5V, ID=-7.5A
9.4
12
m
Ω
V
GS=-10V, ID=-7.5A
8.1
11
m
Ω
V
GS=-10V, ID=-15A
8.5
12
m
Ω
G
fs
Forward transconductance
V
DS=-5V, ID=-7.5A
48
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=-10V, f=1MHz
4410
pF
C
oss
Output capacitance
490
C
rss
Reverse transfer capacitance
334
t
d(on)
Turn on delay time
V
DS=-10V, ID=-15A, RG=25Ω,
V
GS=-10V
(note 4,5)
5
ns
t
r
Rising time
67
t
d(off)
Turn off delay time
530
t
f
Fall time
332
Q
g
Total gate charge
V
DS=-16V, VGS=-10V, ID=-15A
(note 4,5)
91
nC
Q
gs
Gate-source charge
6
Q
gd
Gate-drain charge
13
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
-15
A
I
SM
Pulsed source current
-60
A
V
SD
Diode forward voltage drop.
I
S=-15A, VGS=0V
-1.4
V
t
rr
Reverse recovery time
I
S=-15A, VGS=0V,
dI
F/dt=100A/us
9
ns
Q
rr
Reverse recovery charge
0.8
nC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
I
SD ≤-15A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25
oC
3.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
4.
Essentially independent of operating temperature.



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