Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Mar. 2016. Rev. 2.0

1/6

SW15P03

P-channel Enhanced mode SOP-8 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

-30

V

I

D

Continuous drain current (@T

-15*

A

Continuous drain current (@T

-9.5*

A

I

DM

Drain current pulsed

(note 1)

-60

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

81

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

2

W

0.016

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient（note）

62

*. Drain current is limited by junction temperature.

BV

I

D

: -15A

R

14m

Ω @V

1. Gate 2. Drain 3. Source

SOP-8

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW K 15P03

SW15P03

SOP-8

REEL

Features

 High ruggedness

 Low R

Low R

 Low Gate Charge (Typ 48nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Adaptor Input Switch

for Notebook PC

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including

Fast switching time, low on resistance, low gate charge and especially excellent

Avalanche characteristics.

D

D

D

D

G

S

S

S

Note: R

efined as the solder mounting surface of the drain pins. R

board design.