SW045R02VT datasheet(1/6 Pages) SEMIPOWER

部件名	SW045R02VT

功能描述	N-channel Enhanced mode DFN3*3 MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

网页	http://www.samwinsemi.com

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1 / 6 page

Mar. 2017. Rev. 2.0

1/6

SW045R02VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

20

V

I

D

Continuous drain current (@T

C=25

oC)

80*

A

Continuous drain current (@T

C=100

oC)

50*

A

I

DM

Drain current pulsed

(note 1)

320

A

V

GS

Gate to source voltage

± 12

V

E

AS

Single pulsed avalanche energy

(note 2)

122

mJ

E

AR

Repetitive avalanche energy

(note 1)

9

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@Ta=25oC)

2.6

W

Derating factor above 25oC

0.02

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

48

oC/W

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW H 045R02VT

SW045R02V

DFN3*3

REEL

N-channel Enhanced mode DFN3*3 MOSFET

Features

 High ruggedness

 Low R

DS(ON) (Typ 4.6mΩ)@VGS=2.5V

Low R

DS(ON) (Typ 3.7mΩ)@VGS=4.5V

Low R

DS(ON) (Typ 3.3mΩ)@VGS=10V

 Low Gate Charge (Typ 49nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-DC Converter,Motor Control

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

DSS : 20V

I

D

: 80A

R

DS(ON) : 4.6mΩ@VGS=2.5V

3.7m

Ω@V

GS=4.5V

3.3m

Ω@V

GS=10V

G

D

S

DFN3*3

Gate:4 Drain:5,6,7,8 Source:1,2,3

G(4) D(5,6,7,8)

S(1,2,3)

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user's

board design.

DFN3*3 R

thja : 48

oC/W on a 1 in2 pad of 2oz copper.

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