SW055R03VT datasheet(1/7 Pages) SEMIPOWER

部件名	SW055R03VT

功能描述	N-channel Enhanced mode TO-252/TO-251/DFN3*3 MOSFET

PDF	7 Pages

Scroll/Zoom	100%

制造商	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

网页	http://www.samwinsemi.com

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1 / 7 page

Mar. 2017. Rev. 4.0

1/7

SW055R03VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-252 TO-251 DFN3*3

V

DSS

Drain to source voltage

30

V

I

D

Continuous drain current (@T

C=25

oC)

80*

A

Continuous drain current (@T

C=100

oC)

50*

A

I

DM

Drain current pulsed

(note 1)

320

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

83

mJ

E

AR

Repetitive avalanche energy

(note 1)

8

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

74

83

W

Total power dissipation (@Ta=25oC)

2.9

W

Derating factor above 25oC

0.6

0.7

0.02

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-252 TO-251 DFN3*3

R

thjc

Thermal resistance, Junction to case

1.7

1.5

oC/W

R

thja

Thermal resistance, Junction to ambient

73

43

oC/W

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 055R03VT

SW055R03VT

TO-252

REEL

2

SW I 055R03VT

SW055R03VT

TO-251

TUBE

3

SW H 055R03VT

SW055R03V

DFN3*3

REEL

N-channel Enhanced mode TO-252/TO-251/DFN3*3 MOSFET

Features

 High ruggedness

 Low R

DS(ON) (Typ 6.2mΩ)@VGS=4.5V

(Typ 4.4m

Ω)@V

GS=10V

 Low Gate Charge (Typ 25nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC Converter,Motor Control，

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

DSS : 30V

I

D

: 80A

R

DS(ON) : 6.2mΩ@VGS=4.5V

4.4m

Ω@V

GS=10V

G

D

S

TO-252

1

2

3

TO-251

1

2

3

DFN3*3

G(4) D(5,6,7,8)

S(1,2,3)

TO-252/TO-251:1. Gate 2. Drain 3. Source

DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user‘s

board design. DFN3*3 R

thja : 43

oC/W on a 1 in2 pad of 2oz copper.

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