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Jun. 2016. Rev. 4.0

1/6

SW1N60DC

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-252

SOT-223

V

DSS

Drain to source voltage

600

V

I

D

Continuous drain current (@T

1*

A

Continuous drain current (@T

0.6*

A

I

DM

Drain current pulsed

(note 1)

4

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

50

mJ

E

AR

Repetitive avalanche energy

(note 1)

5

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

52

9.26

W

0.4

0.07

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-252

SOT-223

R

thjc

Thermal resistance, Junction to case

2.4

13.5

R

thja

Thermal resistance, Junction to ambient

100

110

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

TO-252

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 1N60DC

SW1N60DC

TO-252

REEL

2

SW SA 1N60DC

SW1N60DC

SOT-223

REEL

1

2

3

N-channel Enhanced mode TO-252/SOT-223 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ6.3 nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charge,Adaptor,LED

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 1A

R

1

2

3

1

2

3

SOT-223