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SW2N40D

Jun. 2016. Rev. 3.0

1/6

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-92

SOT-223

V

DSS

Drain to source voltage

400

V

I

D

Continuous drain current (@T

2*

A

Continuous drain current (@T

1.2*

A

I

DM

Drain current pulsed

(note 1)

8

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

40

mJ

E

AR

Repetitive avalanche energy

(note 1)

5

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

1.1

6.3

W

0.009

0.05

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-92

SOT-223

R

thjc

Thermal resistance, Junction to case

32.8

20

R

thja

Thermal resistance, Junction to ambient

111

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SWC 2N40D

SW2N40D

TO-92

TAPE

2

SW SA 2N40D

SW2N40D

SOT-223

REEL

N-channel Enhanced mode TO-92/SOT-223 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 7nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC,LED

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 2A

R

1

2

3

1. Gate 2. Drain 3. Source

TO-92

SOT-223

1

2

3

1

2

3