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Sep. 2016. Rev. 3.0

1/6

SW2N40DC

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251S

TO-252

V

DSS

Drain to source voltage

400

V

I

D

Continuous drain current (@T

2*

A

Continuous drain current (@T

1.3*

A

I

DM

Drain current pulsed

(note 1)

8

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

78.3

mJ

E

AR

Repetitive avalanche energy

(note 1)

12.7

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

68.6

64.8

W

0.55

0.52

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251S

TO-252

R

thjc

Thermal resistance, Junction to case

1.82

1.93

R

thja

Thermal resistance, Junction to ambient

94.5

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

TO-251S

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW SI 2N40DC

SW2N40DC

TO-251S

TUBE

2

SW D 2N40DC

SW2N40DC

TO-252

REEL

1

2

3

N-channel Enhanced mode TO-251S/TO-252 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 6.8nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC,LED

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 2A

R

1

2

3

TO-252

1

2

3