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Oct .2016. Rev. 4.0

1/7

SW3N90U

N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

TO-251M TO-252

V

DSS

Drain to source voltage

900

V

I

D

Continuous drain current (@T

3*

A

Continuous drain current (@T

1.9*

A

I

DM

Drain current pulsed

(note 1)

12

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

100

mJ

E

AR

Repetitive avalanche energy

(note 1)

15

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

178.6

183.8

160.3

W

1.43

1.47

1.28

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-251M TO-252

R

thjc

Thermal resistance, Junction to case

0.7

0.68

0.78

R

thja

Thermal resistance, Junction to ambient

90

91

*. Drain current is limited by junction temperature.

BV

I

D

: 3A

R

1. Gate 2. Drain 3. Source

TO-251

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 3N90U

SW3N90U

TO-251

TUBE

2

SW MI 3N90U

SW3N90U

TO-251M

TUBE

3

SW D 3N90U

SW3N90U

TO-252

REEL

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 19nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Adaptor, LED, Industrial Power

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

1

2

3

TO-251M

TO-252

1

2

3