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SW4N40D

Jun. 2016. Rev. 2.0

1/6

N-channel Enhanced mode SOT-223 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

400

V

I

D

Continuous drain current (@T

4*

A

Continuous drain current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

136

mJ

E

AR

Repetitive avalanche energy

(note 1)

20

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

6.3

W

0.05

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

20

R

thja

Thermal resistance, Junction to ambient

*. Drain current is limited by junction temperature.

BV

I

D

: 4A

R

1. Gate 2. Drain 3. Source

SOT-223

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW SA 4N40D

SW4N40D

SOT-223

REEL

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 8.5nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charge, Adaptor, LED

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.