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Oct. 2015. Rev. 2.0

1/7

SW4N60DA

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-252 TO-220F TO-251S

Drain to source voltage

600

V

4*

A

2.5*

A

Drain current pulsed

(note 1)

16

A

Gate to source voltage

±30

V

Single pulsed avalanche energy

(note 2)

171.2

mJ

Repetitive avalanche energy

(note 1)

24.3

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

109.6

18.9

140.2

W

0.88

0.15

0.83

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-252 TO-220F TO-251S

Thermal resistance, Junction to case

1.14

6.6

1.2

Thermal resistance, Junction to ambient

91.3

55

93

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

TO-252

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 4N60DA

SW4N60DA

TO-252

REEL

2

SW F 4N60DA

SW4N60DA

TO-220F

TUBE

3

SW SI 4N60DA

SW4N60DA

TO-251S

TUBE

1

2

3

N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 9.6nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC,LED

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 4A

R

DS(ON)

: 3.35Ω

1

2

3

1

2

3

1

2

3

TO-220F

TO-251S