Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2015. Rev. 2.0

1/6

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-252

Thermal resistance, Junction to case

0.85

0.85

Thermal resistance, Case to Sink

Thermal resistance, Junction to ambient

87

1. Gate 2. Drain 3. Source

SW4N60DC

Item

Sales Type

Marking

Package

Packaging

1

SW I 4N60DC

SW4N60DC

TO251

TUBE

2

SW D 4N60DC

SW4N60DC

TO252

TUBE

Order Codes

Symbol

Parameter

Value

Unit

TO-251

TO-252

Drain to Source Voltage

600

V

4*

A

2.5*

A

Drain current pulsed

(note 1)

16

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

170

mJ

Repetitive Avalanche Energy

(note 1)

25

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

147

147

W

1.17

1.17

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

TO-251

1

2

3

*. Drain current is limited by junction temperature.

TO-252

1

2

3

N-channel Enhancement mode TO-251/TO-252 MOSFET

BV

I

D

: 4A

R

1

2

3

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Features

 High ruggedness

 R

 Gate Charge (Typ 17nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED,Charge