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SW4N65DA 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW4N65DA
功能描述  N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET
PDF  6 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW4N65DA 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW4N65DA Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW4N65DA Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW4N65DA Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW4N65DA Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW4N65DA Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW4N65DA Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2017. Rev. 5.0
2/6
SW4N65DA
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
650
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
0.61
V/oC
I
DSS
Drain to source leakage current
V
DS=650V, VGS=0V
1
uA
V
DS=520V, TC=125
oC
50
uA
I
GSS
Gate to source leakage current, forward
V
GS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
V
GS=-30V, VDS=0V
-100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2.5
4.5
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID=2A
3.35
3.65
Ω
G
fs
Forward transconductance
V
DS=30V, ID=2A
3.1
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
438
pF
C
oss
Output capacitance
39
C
rss
Reverse transfer capacitance
14
t
d(on)
Turn on delay time
V
DS=325V, ID=4A, RG=25Ω,
V
GS=10V
(note 4,5)
12
ns
t
r
Rising time
26
t
d(off)
Turn off delay time
34
t
f
Fall time
24
Q
g
Total gate charge
V
DS=520V, VGS=10V, ID=4A
(note 4,5)
14
nC
Q
gs
Gate-source charge
2.6
Q
gd
Gate-drain charge
7
R
g
Gate resistance
V
DS=0V, Scan F mode
3.3
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
4
A
I
SM
Pulsed source current
16
A
V
SD
Diode forward voltage drop.
I
S=4A, VGS=0V
1.4
V
t
rr
Reverse recovery time
I
S=4A, VGS=0V,
dI
F/dt=100A/us
329
ns
Q
rr
Reverse recovery charge
2.0
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =13.4mH, I
AS =4A, VDD = 50V, RG=25Ω, Starting TJ = 25
oC
3.
I
SD ≤4A, di/dt = 100A/us, VDD ≤ BVDSS, Starting TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.



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