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Jan. 2015. Rev. 1.0

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SW4N65DB

N-channel Enhanced mode TO-251 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

4

A

Continuous drain current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

290

mJ

E

AR

Repetitive avalanche energy

(note 1)

18

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

104.2

W

0.83

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

1.2

R

thja

Thermal resistance, Junction to ambient

120

*. Drain current is limited by junction temperature.

BV

I

D

: 4A

R

1. Gate 2. Drain 3. Source

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 4N65DB

SW4N65DB

TO-251

REEL

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 20nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED, Charge, Adaptor

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-251