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Oct. 2016. Rev. 3.0

1/6

SW4N65DC

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

TO-251N-S2

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

4*

A

Continuous drain current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

184

mJ

E

AR

Repetitive avalanche energy

(note 1)

30

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

147

147

W

1.18

1.18

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-251N-S2

R

thjc

Thermal resistance, Junction to case

0.85

0.85

R

thja

Thermal resistance, Junction to ambient

90

90

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 4N65DC

SW4N65DC

TO-251

TUBE

2

SW NC4N65DC

SW4N65DC

TO-251N-S2

TUBE

N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 17nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Charger,TV-POWER

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 4A

R

1

2

3

TO-251

1

2

3

TO-251N-S2

1

2

3