Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Jul. 2016. Rev. 3.0

1/7

SW4N70D

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220F

R

thjc

Thermal resistance, Junction to case

0.86

0.78

6.04

R

thja

Thermal resistance, Junction to ambient

81.4

86.8

52.1

Item

Sales Type

Marking

Package

Packaging

1

SW I 4N70D

SW4N70D

TO-251

TUBE

2

SW D 4N70D

SW4N70D

TO-252

REEL

3

SW F 4N70D

SW4N70D

TO-220F

TUBE

Order Codes

Symbol

Parameter

Value

Unit

TO-251

TO-252

TO-220F

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

4*

A

Continuous drain current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

200

mJ

E

AR

Repetitive avalanche energy

(note 1)

10

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

145

160.3

20.7

W

1.16

1.28

0.17

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

1

2

3

TO-251

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 20nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charger,LED

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 4A

R

1

2

3

N-channel Enhanced mode TO-251/TO-252/TO-220F MOSFET

TO-252

TO-220F

1

2

3

1

2

3