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May. 2017. Rev. 4.0

1/7

SW640D

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220FT TO-263

V

DSS

Drain to source voltage

200

V

I

D

Continuous drain current (@T

18*

A

Continuous drain current (@T

11*

A

I

DM

Drain current pulsed

(note 1)

72

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

243

mJ

E

AR

Repetitive avalanche energy

(note 1)

33

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

119

29.5

110.6

W

0.95

0.23

0.88

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220FT TO-263

R

thjc

Thermal resistance, Junction to case

1.05

4.24

1.13

R

thja

Thermal resistance, Junction to ambient

54

49

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 640D

SW640D

TO-220

TUBE

2

SW Y 640D

SW640D

TO-220FT

TUBE

3

SW B 640D

SW640D

TO-263

TUBE

N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 38nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED , Adaptor

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 18A

R

1

2

3

TO-220

1

2

3

TO-220FT

1

2

3

TO-263

1

2

3