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ACE6604B 数据表(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE6604B 数据表(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 5 page ![]() ACE6604B N-Channel Enhancement Mode Power MOSFET VER 1.1 2 Ordering information ACE6604B XX + H Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA 60 V Zero gate voltage drain current IDSS VDS=60V, VGS=0V 1 µA Gate threshold voltage VGS(th) VGS=VDS, IDS=250µA 1.2 1.6 2.5 V Gate leakage current IGSS VGS=±20V, VDS=0V ±100 µA Drain-source on-state resistance RDS(ON) VGS=10V, ID=30A 4.6 5.6 mΩ VGS=4.5V, ID=15A 5.3 7 Forward Trans conductance gFS VDS =10V, ID= 3A 15 S Diode forward voltage VSD ISD=1A, VGS=0V 1.2 V Maximum body-diode continuous current IS 85 A Switching Total Gate Charge Qg VGS=4.5V, VDS=30V, ID=10A 33 nC Gate-Source Charge Qgs 11 Gate-Drain Charge Qgd 12 Turn-on Delay Time td (on ) VDD=15V, ID=1A, VGS=10V,RG=3.3 Ω 21 ns Turn-on Rise Time tr 17 Turn-off Delay Time td(off) 72 Turn-off Fall Time tf 21 Dynamic Input Capacitance Ciss VGS=0V, VDS=25V, f=1.0MHz 4750 pF Output Capacitance Coss 330 Reverse Transfer Capacitance Crss 161 PN: DFN5*6-EP Pb - free Halogen - free |
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