Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V

Forward Current - 3.0A

FEATURES

• Metal silicon junction, majority carrier conduction

• For surface mounted applications

• Low power loss, high efficiency

• High forward surge current capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

MECHANICAL DATA

• Case: SOD-123FL

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight:15mg 0.00048oz

PINNING

PIN

1

2

DESCRIPTION

Cathode

Anode

Top View

Marking Code: DS32W

---S32

DS34W

---S34

DS36W

---S36

DS38W

---S38

DS310W

---S310

DS312W

---S312

DS315W

---S315

DS320W

---S320

Simplified outline SOD-123FL and symbol

Maximum DC Blocking Voltage

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Maximum Average Forward Rectified Current

Typical Junction Capacitance

20

40

V

14

28

V

V

3.0

0.5

10

-55 ~ +150

A

A

V

mA

pF

°C

Units

Absolute Maximum Ratings and Electrical characteristics

Ratings at

ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,

for capacitive load, derate by 20 %

25

°C

20

40

Peak Forward Surge Current,8.3ms

Single Half Sine-wave Superimposed

on Rated Load (JEDEC method)

Max Instantaneous Forward Voltage at 3 A

Maximum DC Reverse Current

at Rated DC Reverse Voltage

Operating Junction Temperature Range

DS32W

DS34W

DS36W

DS38W

DS310W

DS312W

DS315W

DS320W

T = 25

°C

a

T =100

°C

a

Symbols

Storage Temperature Range

60

42

60

80

56

80

100

100

0.55

0.70

0.85

250

-55 ~ +150

°C

120

120

150

105

150

200

140

200

0.95

0.3

5

160

80

Typical Thermal Resistance

°C/W

70

80

70

84

DS32W THRU DS320W

Page 1 of 3

1

2

（1）

（2）

Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）

（1）

P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

2016 Rev 1.0