Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2016. Rev. 6.0

1/8

SW6N70DA

N-channel Enhanced mode TO-251S/TO-251U/TO-252/TO-220F

/TO-251/TO-251NX/TO-220 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO251S TO251U TO252 TO220F TO251 TO251NX TO220

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

6*

A

Continuous drain current (@T

3.8*

A

I

DM

Drain current pulsed

(note 1)

24

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy (note 2)

216

mJ

E

AR

Repetitive avalanche energy

(note 1)

20

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

138.8

138.8

195.3

21.9

138.8

147

186.6

W

1.11

1.11

1.56

0.18

1.11

1.18

1.49

T

Operating junction temperature & storage

temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO251S TO251U TO252 TO220F TO251 TO251NX TO220

R

thjc

Thermal resistance, Junction to case

0.9

0.9

0.64

5.7

0.9

0.85

R

thja

Thermal resistance, Junction to ambient

80

80

46.9

80

100

59.2

*. Drain current is limited by junction temperature.

BV

I

D

: 6A

R

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW SI 6N70DA

SW6N70DA

TO-251S

TUBE

2

SW UI 6N70DA

SW6N70DA

TO-251U

TUBE

3

SW D 6N70DA

SW6N70DA

TO-252

REEL

4

SW F 6N70DA

SW6N70DA

TO-220F

TUBE

5

SW I 6N70DA

SW6N70DA

TO-251

TUBE

6

SWNX 6N70DA

SW6N70DA

TO-251NX

TUBE

7

SW P 6N70DA

SW6N70DA

TO-220

TUBE

1. Gate 2. Drain 3. Source

TO251

TO251U

TO251S

1

2

3

TO252

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 26nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: TV-Power

，LED，

Charge

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO220F

TO220

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

TO251NX