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Jun. 2017. Rev. 5.0

1/7

SW7N65D

N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 TO-251 TO-251N TO-252 TO-220F

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

7*

A

Continuous drain current (@T

4.4*

A

I

DM

Drain current pulsed

(note 1)

28

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

430

mJ

E

AR

Repetitive avalanche energy

(note 1)

40

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

208.3

173.6

27.8

W

1.67

1.39

0.22

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220 TO-251 TO-251N TO-252 TO-220F

R

thjc

Thermal resistance, Junction to case

0.6

0.72

4.5

R

thja

Thermal resistance, Junction to ambient

60

82

50

*. Drain current is limited by junction temperature.

BV

I

D

: 7A

R

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 7N65D

SW7N65D

TO-220

TUBE

2

SW I 7N65D

SW7N65D

TO-251

TUBE

3

SW N 7N65D

SW7N65D

TO-251N

TUBE

4

SW D 7N65D

SW7N65D

TO-252

REEL

5

SW F 7N65D

SW7N65D

TO-220F

TUBE

1. Gate 2. Drain 3. Source

TO-220

TO-251

TO-252 TO-220F

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 30nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Charge,LED,

PC Power

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

1

2

3

1

2

3

1

2

3

1

2

3

1

2

3

TO-251N