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HT45F0027 数据表(PDF) 13 Page - Holtek Semiconductor Inc |
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HT45F0027 数据表(HTML) 13 Page - Holtek Semiconductor Inc |
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13 / 112 page ![]() Rev. 1.20 12 �an�a�� 21� 201� Rev. 1.20 13 �an�a�� 21� 201� HT45F0027 PIR 8-Bit Flash MCU HT45F0027 PIR 8-Bit Flash MCU OP Amplifier Characteristics Ta=25°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions D.C. Characteristic VDDO Ope�ating Voltage — — 2.7 — 5.5 V IDDO Q�iescent C���ent 5V No load — 2 4 µA IOPOS Inp�t Offset C���ent 5V VCM=1/2VDD� Ta=-40~85°C — 10 — nA VOS OP Amp Inp�t Offset Voltage 5V — -10 — 10 mV GBW OP Amp Gain Band Bandwidth 5V — 2.5 5 — kHz PSRR Powe� S�ppl� Rejection Ratio — — �0 80 — dB CMRR Common Mode Rejection Ratio — V IN =(1/2)×VREG o� VIN=(2/3)×VREG �0 80 — dB A.C. Characteristic AOL Open Loop Gain — No load �0 80 — dB SR Slew Rate+� Slew Rate- — No load — 0.01 — V/µs tPD OPA Response Time 5V No load — 1.5 2 ms LDO Characteristics Ta=25°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDDIN S�ppl� Voltage — — 2.7 3.3 5.5 V VDDOUT O�tp�t Voltage — VREG o�tp�t decided b� VSEL fields -3% VREG +3% V IREF D�iving C���ent — VDDIN=5V� VCAP=0.1µF 1 — — mA IDD C���ent Cons�mption 5V Afte� sta�t�p� no load� incl�de bandgap cons�mption 3 — 8 µA Note:1.ThisLDOcanprovidestablepowersupplyforPIRsensorwitha10µFcap. 2.TheVREGpinshouldbeconnectedto0.1µFforADCreferencevoltageand10µFforPIRsensor. |
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