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Sep. 2016. Rev. 2.0

1/6

SW80N04V

N-channel Enhanced mode TO-251/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

TO-252

V

DSS

Drain to source voltage

40

V

I

D

Continuous drain current (@T

80*

A

Continuous drain current (@T

50.4*

A

I

DM

Drain current pulsed

(note 1)

320

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

142

mJ

E

AR

Repetitive avalanche energy

(note 1)

12

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

96.2

104

W

0.77

0.83

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

TO-252

R

thjc

Thermal resistance, Junction to case

1.3

1.2

R

thja

Thermal resistance, Junction to ambient

85

*. Drain current is limited by junction temperature.

BV

I

D

: 80A

R

7.2mΩ@VGS=4.5V

1. Gate 2. Drain 3. Source

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 80N04V

SW80N04V

TO-251

TUBE

2

SW D 80N04V

SW80N04V

TO-252

REEL

1

2

3

Features

 High ruggedness

 Low R

Typ 7.2m

Ω@V

 Low Gate Charge (Typ 49nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED, Charge, Adaptor

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

Including fastswitching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

TO-251

TO-252

1

2

3