SW80N08V1 datasheet(1/6 Pages) SEMIPOWER

部件名	SW80N08V1

功能描述	N-channel Enhanced mode TO-251/DFN5*6 MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

网页	http://www.samwinsemi.com

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1 / 6 page

Mar. 2017. Rev. 4.0

1/6

SW80N08V1

N-channel Enhanced mode TO-251/DFN5*6 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

DFN5*6

V

DSS

Drain to source voltage

80

V

I

D

Continuous drain current (@T

C=25

oC)

80*

A

Continuous drain current (@T

C=100

oC)

50*

A

I

DM

Drain current pulsed

(note 1)

320

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

258

mJ

E

AR

Repetitive avalanche energy

(note 1)

19

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

192.3

W

Total power dissipation (@Ta=25oC)

2.7

W

Derating factor above 25oC

1.54

0.02

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

DFN5*6

R

thjc

Thermal resistance, Junction to case

0.65

oC/W

R

thja

Thermal resistance, Junction to ambient

76

46

oC/W

*. Drain current is limited by junction temperature.

BV

DSS : 80V

I

D

: 80A

R

DS(ON) : 10mΩ @VGS=4.5V

9m

Ω @V

GS=10V

G

D

S

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 80N08V1

SW80N08V1

TO-251

TUBE

2

SW HA 80N08V1

SW80N08V1

DFN5*6

REEL

Features

 High ruggedness

 Low R

DS(ON) (Typ 10mΩ)@VGS=4.5V

(Typ 9m

Ω)@V

GS=10V

 Low Gate Charge (Typ 79nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including

Fast switching time, low on resistance, low gate charge and especially excellent

Avalanche characteristics.

TO-251

1

2

3

DFN5*6

G(4) D(5,6,7,8)

S(1,2,3)

TO-251: 1.Gate 2.Drain 3.Source

DFN5*6: 4.Gate 5,6,7,8.Drain 1,2,3.Source

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user's

board design.

DFN5*6 R

thja : 46

oC/W on a 1 in2 pad of 2oz copper.

类似零件编号 - SW80N08V1

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