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SW830D1 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW830D1
功能描述  N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET
PDF  6 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW830D1 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2014. Rev.3.0
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
500
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
0.42
V/oC
I
DSS
Drain to source leakage current
V
DS=500V, VGS=0V
1
uA
V
DS=400V, TC=125
oC
50
uA
I
GSS
Gate to source leakage current, forward
V
GS=30V, VDS=0V
100
nA
V
GS=-30V, VDS=0V
-100
nA
Gate to source leakage current, reverse
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2.5
4.5
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID = 2.5A
1.33
1.54
Ω
Gfs
Forward Transconductance
V
DS = 30 V, ID = 2.5A
3.5
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
519
pF
C
oss
Output capacitance
76
C
rss
Reverse transfer capacitance
19
t
d(on)
Turn on delay time
V
DS=250V, ID=5A, RG=25Ω
(note 4,5)
11
ns
tr
Rising time
28
t
d(off)
Turn off delay time
36
t
f
Fall time
26
Q
g
Total gate charge
V
DS=400V, VGS=10V, ID=5A
(note 4,5)
17
nC
Q
gs
Gate-source charge
4
Q
gd
Gate-drain charge
8
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
5
A
I
SM
Pulsed source current
20
A
V
SD
Diode forward voltage drop.
I
S=5A, VGS=0V
1.25
V
T
rr
Reverse recovery time
I
S=5A, VGS=0V,
dI
F/dt=100A/us
319
ns
Q
rr
Reverse recovery Charge
3.9
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 40mH, I
AS = 4A, VDD = 50V, RG=25Ω, Starting TJ = 25
oC
3.
I
SD ≤ 5A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
SW830D1
SAMWIN
2/6



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