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SW9435 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW9435
功能描述  P-channel SOP-8 MOSFET
PDF  4 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW9435 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW9435 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW9435 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW9435 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW9435 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2015. Rev.1.0
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=-250uA
-30
V
I
DSS
Drain to source leakage current
V
DS=-24V, VGS=0V
-1
uA
I
GSS
Gate to source leakage current, forward
V
GS=-20V, VDS=0V
100
nA
Gate to source leakage current, reverse
V
GS=20V, VDS=0V
-100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=-250uA
-1
-1.7
-3
V
R
DS(ON)
Drain to source on state resistance
V
GS=-10V, ID = -5.3A
43.5
50
mΩ
V
GS=-4.5V, ID = -4.2A
64
90
mΩ
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=-15V, f=1MHz
845
pF
C
oss
Output capacitance
150
C
rss
Reverse transfer capacitance
100
t
d(on)
Turn on delay time
V
DD=-15V, RL =15Ω
I
D=-1A, VGEN=-10V ,RG=6Ω
(note 2，3)
24
ns
tr
Rising time
39
t
d(off)
Turn off delay time
155
t
f
Fall time
143
Q
g
Total gate charge
V
DS=-25V, VGS=-10V, ID=-5.3A
(note 2，3)
19
nC
Q
gs
Gate-source charge
2
Q
gd
Gate-drain charge
6
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
3.
Essentially independent of operating temperature.
SAMWIN
2/4
SW9435



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