SI7946DP datasheet(2/5 Pages) VISHAY

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Si7946DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 72282

S-31361—Rev. A, 30-Jun-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

4.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 120 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 120 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 3.3 A

0.124

0.150

Drain-Source On-State Resistancea

rDS(on)

VGS = 6 V, ID = 3.1 A

0.137

0.168

Forward Transconductancea

gfs

VDS = 15 V, ID = 3.3 A

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

0.87

1.2

Dynamicb

Total Gate Charge

12.6

Gate-Source Charge

Qgs

VDS = 75 V, VGS = 10 V, ID = 3.3 A

2.8

Gate-Drain Charge

Qgd

4.5

Gate Resostamce

f = 1MHz

3.5

Turn-On Delay Time

td(on)

Rise Time

VDD = 75 V, RL = 75 W

Turn-Off Delay Time

td(off)

VDD = 75 V, RL = 75 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

100

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0123456

012345

VGS = 10 thru 6 V

TC = 125_C

-55_C

5 V

25_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

4 V

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