STTH2002CT datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

STTH2002C

2/7

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage

current

Tj = 25°C

VR =VRRM

µA

Tj = 125°C

100

VF**

Forward voltage drop

Tj = 25°C

IF =10 A

1.1

Tj = 25°C

IF =20 A

1.25

Tj = 150°C

IF =10 A

0.78

0.89

Tj = 150°C

IF =20 A

1.05

Pulse test: * tp = 5ms,

δ <2%

** tp = 380µs,

δ <2%

To evaluate the maximum conduction losses use the following equation :

P = 0.73 x IF(AV) + 0.016 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Maximum

Unit

Rth (j-c)

Junction to case

TO-220AB / I

2PAK / D2PAK Per diode

2.5

°C/W

Per device

1.6

TO-220FPAB

Per diode

Per device

3.8

Rth (j-c)

Coupling

TO-220AB / I

2PAK / D2PAK

0.7

°C/W

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously:

∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

THERMAL PARAMETERS

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse

recovery time

Tj = 25°C

IF =1A VR = 30V

dIF/dt = 100 A/µs

IRM

Reverse

recovery current

Tj = 125°C

IF =10A VR = 160V

dIF/dt = 200 A/µs

7.0

9.0

tfr

Forward

recovery time

Tj = 25°C

IF =10A dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

200

VFP

Forward

recovery voltage

Tj = 25°C

IF =10A dIF/dt = 100 A/µs

2.4

DYNAMIC ELECTRICAL CHARACTERISTICS

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