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TSV711 数据表(PDF) 17 Page - STMicroelectronics |
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TSV711 数据表(HTML) 17 Page - STMicroelectronics |
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17 / 29 page ![]() DocID023707 Rev 2 17/29 TSV711, TSV712, TSV714 Application information 4.5 Long-term input offset voltage drift To evaluate product reliability, two types of stress acceleration are used: • Voltage acceleration, by changing the applied voltage • Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. Equation 2 Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3. Equation 3 Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate k is the Boltzmann constant (8.6173 x 10-5 eV.K-1) TU is the temperature of the die when VU is used (K) TS is the temperature of the die under temperature stress (K) The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. AFV e β VS VU – () ⋅ = AFT e Ea k ------ 1 TU ------ 1 TS ------ – ⎝⎠ ⎛⎞ ⋅ = AF AFT AFV × = |
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