2SC5876

Transistor

2/3

!

!

!

!Electrical characteristics (Ta=25

°C)

∗1 Pulse measurement

∗1

∗1

Parameter

Symbol

fT

Cob

Ton

Min.

6

−

−

−

120

−

−

−

−

−

300

−−

5

70

−

1.0

1.0

−

150

300

390

−

−

−

=100µA

=40V

=4V

=500mA,

=50mA

= −50mA

V

µA

µA

MHz

mV

pF

ns

Tstg

−

130

−

ns

Tf

−

80

−

ns

Typ.

Max.

Unit

Conditions

60

−−

V

=1mA

Collector

−emitter breakdown voltage

Collector cut-off current

DC current gain

Transition frequency

Collector output capacitance

Turn-on time

Storage time

Fall time

Emitter cut-off current

Collector

−emitter staturation voltage

60

−−

=100µA

V

Collector

−base breakdown voltage

Emitter

−base breakdown voltage

!

!

!

QR

120-270

180-390

!

!

!

!Electrical characteristic curves

Fig.1 Safe operating area

110

0.1

100

10

1

0.1

0.01

DC

1ms

10ms

100ms

Single non

repetitive pulse

500

µs

Fig.2 Switching Time

1

0.01

0.1

10

1000

100

10

Ta

=25°C

=25V

=10/1

Tstg

Tf

Ton

Fig.3 DC current gain vs. collector

current

0.01

0.1

0.001

1

1000

100

10

1

Ta

=125°C

Ta

=25°C

Ta

= −40°C

=2V

Fig.4 DC current gain vs. collector

current

0.001

0.01

0.1

1

1

10

100

1000

=3V

=2V

Ta

=25°C

=5V

0.001

0.01

0.1

0.01

0.1

1

10

(A)

1

=10/1

Ta

=125°C

Ta

=25°C

Fig.5 Collector-emitter saturation voltage

vs. collector current

Ta

= −40°C

0.001

0.1

0.01

1

0.01

0.1

1

10

(A)

Fig.6 Collector-emitter saturation voltage

vs. collector current

=10/1

=20/1

Ta

=25°C