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9639 数据表(PDF) 1 Page - STMicroelectronics

部件名 9639
功能描述  N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET??POWER MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

9639 数据表(HTML) 1 Page - STMicroelectronics

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TARGET DATA
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STS5N150
N-CHANNEL 150V - 0.045
Ω - 5A SO-8
LOW GATE CHARGE STripFET™ POWER MOSFET
s
TYPICAL RDS(on) = 0.045 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
EXTREMELY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
Ordering Information
TYPE
VDSS
RDS(on)
ID
STS5N150
150 V
<0.06
5 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STS5N150
S5N150
SO-8
TAPE & REEL
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
150
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
150
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C
5A
ID
Drain Current (continuous) at TC = 100°C
3A
IDM(•)
Drain Current (pulsed)
20
A
Ptot
Total Dissipation at TC = 25°C
2.5
W
Tstg
Storage Temperature
-55 to 150
°C
Tj
Operating Junction Temperature


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