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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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SST 数据表(PDF) 2 Page - Vishay Siliconix |
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SST 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  J/SST/U308 Series Vishay Siliconix www.vishay.com 2 Document Number: 70237 S-50149—Rev. H, 24-Jan-05 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage −25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current : (J/SST Prefixes) 10 mA . . . . . . . . . . . . . . . . . . . . (U Prefix) 20 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (1/16” from case for 10 sec.) 300_C . . . . . . . . . . . . . . . . . . . Storage Temperature : (J/SST Prefixes) −55 to 150_C . . . . . . . . . . . . . . (U Prefix) −65 to 175_C . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature −55 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation : (J/SST Prefixes)a 350 mW . . . . . . . . . . . . . . . . . (U Prefix)b 500 mW . . . . . . . . . . . . . . . . . . . . . . . Notes a. Derate 2.8 mW/_C above 25_C b. Derate 4 mW/_C above 25_C SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED) Limits J/SST308 J/SST309 J/SST310 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = −1 mA , VDS = 0 V −35 −25 −25 −25 V Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA −1 −6.5 −1 −4 −2 −6.5 V Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 12 60 12 30 24 60 mA Gate Reverse Current IGSS VGS = −15 V, VDS = 0 V −0.002 −1 −1 −1 nA Gate Reverse Current IGSS TA = 125_C −0.001 −1 −1 −1 mA Gate Operating Current IG VDG = 9 V, ID = 10 mA −15 pA Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W Gate-Source Forward Voltage VGS(F) IG = 10 mA VDS = 0 V J 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance gfs VDS = 10 V, ID = 10 mA 14 8 10 8 mS Common-Source Output Conductance gos VDS = 10 V, ID = 10 mA f = 1 kHz 110 250 250 250 mS Common-Source Ci J 4 5 5 5 Common-Source Input Capacitance Ciss VDS = 10 V V 10 V SST 4 pF Common-Source C Crss DS VGS = −10 V f = 1 MHz J 1.9 2.5 2.5 2.5 pF Common Source Reverse Transfer Capacitance Crss f = 1 MHz SST 1.9 Equivalent Input Noise Voltage en VDS = 10 V, ID = 10 mA f = 100 Hz 6 nV⁄ √Hz High Frequency Common-Gate gf f = 105 MHz 14 Common-Gate Forward Transconductance gfg f = 450 MHz 13 mS Common-Gate g f = 105 MHz 0.16 mS Common-Gate Output Conductance gog VDS = 10 V f = 450 MHz 0.55 Common Gate Power Gainc G VDS = 10 V ID = 10 mA f = 105 MHz 16 Common-Gate Power Gainc Gpg f = 450 MHz 11.5 dB Noise Figure NF f = 105 MHz 1.5 dB Noise Figure NF f = 450 MHz 2.7 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match. |
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