LM139AFKB datasheet(4/19 Pages) TI1

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LM139A-MIL

SLCS161 – JUNE 2017

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential voltages, are with respect to network ground.

(3)

Differential voltages are at xIN+ with respect to xIN–.

(4)

Input current flows through parasitic diode to ground and will turn on parasitic transistors that will increase ICC and may cause output to

be incorrect. Normal operation resumes when input is removed.

(5)

Short circuits from outputs to VCC can cause excessive heating and eventual destruction.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VCC

Supply voltage(2)

VID

Differential input voltage(3)

±36

Input voltage range (either input)

–0.3

Input current(4)

–50

Output voltage

Output current

Duration of output short circuit to ground(5)

Unlimited

Operating virtual-junction temperature

150

°C

Case temperature for 60 s

FK package

260

°C

Lead temperature 1.6 mm (1/16 in) from case for 60 s

J package

300

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±500

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±750

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VCC

Supply voltage

Junction temperature

–55

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

LM139A-MIL

UNIT

D (SOIC) N (PDIP)

J (CDIP)

W (CFP)

FK (LCCC)

RθJA

Junction-to-ambient thermal resistance

98.8

89.5

156.2

82.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

64.3

73.4

46.1

86.7

60.7

°C/W

RθJB

Junction-to-board thermal resistance

59.7

58.7

78.7

154.6

59.4

°C/W

ψJT

Junction-to-top characterization parameter

25.7

48.3

56.5

°C/W

ψJB

Junction-to-board characterization parameter

59.3

58.5

71.8

133.5

58.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

24.2

14.3

9.7

°C/W

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