AD149 datasheet(1/2 Pages) ISC

部件名	AD149

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

AD149

DESCRIPTION

·

Wide Area of Safe Operation

·

DC Current Gain-

: hFE=30-100@IC= -1A

·

Collector-Emitter Saturation Voltage-

: VCE(sat)= -0.7V(Max)@ IC= -3A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general-purpose power switch and amplifier,

consumer and industrial applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.52

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-3.5

A

PC

Collector Power Dissipation

@TC=25℃

30

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-55~200

℃

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