Features

IPS042G

DUAL FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD 60153-J

Description

The IPS042G is a fully protected dual low side SMART

POWER MOSFET that features over-current, over-tem-

perature, ESD protection and drain to source active

clamp.This device combines a HEXFET® POWER

MOSFET and a gate driver. It offers full protection

and high reliability required in harsh environments.

The driver allows short switching times and provides

efficient protection by turning OFF the power MOSFET

when the temperature exceeds 165

drain current reaches 2A. This device restarts once

the input is cycled. The avalanche capability is

significantly enhanced by the active clamp and cov-

ers most inductive load demagnetizations.

Package

Product Summary

500m

Ω (max)

50V

2A

1.5

µs

8-Lead SOIC

www.irf.com

1

Typical Connection

S

Q

Load

D

S

control

IN

R in series

(if needed)

Logic signal

(Refer to lead assignment for correct pin configuration)