BD830 datasheet(2/2 Pages) ISC

部件名	BD830

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

BD830

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-100

VCE(sat)

Collector-Emitter Saturation Voltage

IC=- 500mA; IB= -50mA

-0.5

VBE(on)

Base-Emitter On Voltage

IC= -0.5A ; VCE= -2V

-1.0

ICBO

Collector Cutoff Current

VCB= -30V; IE= 0

-0.1

VCB=-30V; IE= 0; TC= 125℃

-10

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

hFE-1

DC Current Gain

IC= -5mA ; VCE= -2V

hFE-2

DC Current Gain

IC= -150mA ; VCE= -2V

250

hFE-3

DC Current Gain

IC= -500mA ; VCE=- 2V

Current-Gain—Bandwidth Product

IC= -50mA ; VCE=- 5V

MHz

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