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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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IRF7490 数据表(PDF) 1 Page - International Rectifier |
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IRF7490 数据表(HTML) 1 Page - International Rectifier |
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1 / 9 page  Symbol Parameter Max. Units VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.3 A IDM Pulsed Drain Current 43 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 Linear Derating Factor 20 mW/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) www.irf.com 1 9/23/02 Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A IRF7490 HEXFET® Power MOSFET Notes through are on page 9 PD - 94508 Absolute Maximum Ratings VDSS RDS(on) max Qg 100V 39m W@VGS=10V 37nC l High frequency DC-DC converters Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current |
类似零件编号 - IRF7490 |
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类似说明 - IRF7490 |
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