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NFQ60 数据表(PDF) 1 Page - Naina Semiconductor ltd.

部件名 NFQ60
功能描述  Single Phase Full Controlled Bridge Rectifier, 60 Amps
PDF  2 Pages
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制造商  NAINA [Naina Semiconductor ltd.]
网页  http://www.nainasemi.com
标志 NAINA - Naina Semiconductor ltd.

NFQ60 数据表(HTML) 1 Page - Naina Semiconductor ltd.

  NFQ60 Datasheet HTML 1Page - Naina Semiconductor ltd. NFQ60 Datasheet HTML 2Page - Naina Semiconductor ltd.  
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Naina Semiconductor Ltd.
NFQ60
1
D-95, Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120-4273653
sales@nainasemi.com
www.nainasemi.com
Single Phase Full Controlled Bridge Rectifier, 60 Amps
Features
Easy connections, screw type terminals
Good surge current capability
Low forward voltage drop
Easy mounting
Voltage Ratings (TJ = 25oC unless otherwise noted)
Type
number
Voltage
code
VRRM, Max.
repetitive peak
reverse voltage
(V)
VRSM, Max. non-
repetitive peak
reverse voltage
(V)
IRRM max
@ TVJM
(mA)
NFQ60
80
800
900
5.0
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
Electrical Specifications (TJ = 25oC unless otherwise noted)
Parameters
Conditions
Symbol
Values
Units
Maximum on-state average current
TC = 85oC
IdAVM
60
A
Forward surge current (non-repetitive), one cycle
f = 50Hz, TVJ = TVJM, VR = 0
IFSM, ITSM
600
A
Maximum forward voltage drop
IT = 55A, TVJ = 25 oC
VTM
1.4
V
Current required for fusing
f = 50Hz, TVJ = TVJM, VR = 0
I2t
1800
A2s
Maximum rate of rise of on-state current
TVJ = TVJM, f = 50Hz, IT = ITAVM
di/dt
500
A/µs
Critical rate of rise of off-state voltage
TVJ = TVJM, VDR = 2/3 VDRM
dv/dt
1000
V/µs
Gate voltage to trigger
VD = 6V, TVJ = 25 oC
VGT
1.0
V
Gate current to trigger
VD = 6V, TVJ = 25 oC
IGT
100
mA
Holding current
TVJ = 25 oC, VD = 6V
IH
150
mA
Latching current
TVJ = 25 oC
IL
200
mA
RMS isolation voltage
f = 50Hz, t = 1s
VISO
3000
V
Thermal and Mechanical Specifications (TJ = 25oC unless otherwise noted)
Parameters
Symbol
Values
Units
Operating junction temperature range
TVJ
- 40 to + 125
oC
Maximum junction temperature
TVJM
125
oC
Maximum storage temperature range
TSTG
- 40 to + 125
oC
Maximum thermal resistance, junction to case
Rth(J-C)
0.20
oC/W
Mounting torque ±10%
to heatsink
F
3.5
Nm
to terminal
3.5
Approximate weight
W
170
g


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