IRK.71, .91 Series

3

Bulletin I27132 rev. I 09/04

www.irf.com

I

RRM

Max. peak reverse and

I

DRM

off-state leakage current

2500 (1 min)

50 Hz, circuit to base, all terminals

3500 (1 sec)

shorted

dv/dt Max. critical rate of rise

T

o

C, linear to 0.67 V

of off-state voltage (5)

gate open circuit

T

J

Junction operating

temperature range

Storage temp. range

- 40 to 125

R

thJC

Max. internal thermal

resistance, junction

0.165

0.135

Per module, DC operation

to case

R

thCS

Typical thermal resistance

case to heatsink

T

Mounting torque ± 10%

to heatsink

busbar

3

wt

Approximate weight

110 (4)

gr (oz)

Case style

TO-240AA

JEDEC

15

mA

T

o

C, gate open circuit

Thermal and Mechanical Specifications

500

V/µs

Parameters

IRK.71

IRK.91

Units

Conditions

- 40 to 125

0.1

5

Triggering

Blocking

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the

spread of the compound

K/W

Nm

Mounting surface flat, smooth and greased

V

INS

RMS isolation voltage

V

P

GM

Max. peak gate power

12

12

P

3.0

3.0

I

GM

Max. peak gate current

3.0

3.0

A

-V

GM

Max. peak negative

gate voltage

V

GT

Max. gate voltage

4.0

required to trigger

2.5

1.7

I

GT

Max. gate current

270

required to trigger

150

mA

80

V

GD

Max. gate voltage

T

o

C,

that will not trigger

rated V

I

GD

Max. gate current

T

o

C,

that will not trigger

rated V

Parameters

IRK.71

IRK.91

Units

Conditions

0.25

V

6mA

W

V

10

Anode supply = 6V

resistive load

Anode supply = 6V

resistive load

°C

Parameters

IRK.71

IRK.91

Units

Conditions

Sine half wave conduction

Rect. wave conduction

Devices

Units

IRK.71

0.06

0.07

0.09

0.12

0.18

0.04

0.08

0.10

0.13

0.18

IRK.91

0.04

0.05

0.06

0.08

0.12

0.03

0.05

0.06

0.08

0.12

°C/W

∆R Conduction (per Junction)