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M30620FCAFP 数据表(PDF) 243 Page - Mitsubishi Electric Semiconductor |
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M30620FCAFP 数据表(HTML) 243 Page - Mitsubishi Electric Semiconductor |
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243 / 274 page ![]() Appendix Standard Serial I/O Mode 1 (Flash Memory Version) Mitsubishi microcomputers M16C / 62A Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 243 Block Erase Command This command erases the data in the specified block. Execute the block erase command as explained here following. (1) Transfer the “2016” command code with the 1st byte. (2) Transfer addresses A8 to A15 and A16 to A23 with the 2nd and 3rd bytes respectively. (3) Transfer the verify command code “D016” with the 4th byte. With the verify command code, the erase operation will start for the specified block in the flash memory. Write the highest address of the specified block for addresses A8 to A23. When block erasing ends, the RTS1 (BUSY) signal changes from the “H” to the “L” level. After block erase ends, the result of the block erase operation can be known by reading the status register. For more information, see the section on the status register. Each block can be erase-protected with the lock bit. For more information, see the section on the data protection function. Figure 1.29.7. Timing for block erasing A8 to A15 A16 to A23 2016 D016 CLK1 RxD1 TxD1 RTS1(BUSY) (M16C reception data) (M16C transmit data) |
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