数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

IRF730FP 数据表(PDF) 2 Page - First Components International

部件名 IRF730FP
功能描述  6.0A 400V N CHANNEL POWER MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  FCI [First Components International]
网页  http://www.cotra.com.tw/
标志 FCI - First Components International

IRF730FP 数据表(HTML) 2 Page - First Components International

  IRF730FP Datasheet HTML 1Page - First Components International IRF730FP Datasheet HTML 2Page - First Components International IRF730FP Datasheet HTML 3Page - First Components International  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25
.
CIRF730
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250
A)
V(BR)DSS
400
V
Drain-Source Leakage Current
(VDS = 400V, VGS = 0 V)
(VDS = 400V, VGS = 0 V, TJ = 125
)
IDSS
25
100
A
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
IGSSR
-100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250
A)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3A) (Note 4)
RDS(on)
1.0
Forward Transconductance (VDS = 50V, ID = 3 A) (Note 4)
gFS
2.9
mhos
Input Capacitance
Ciss
515
720
pF
Output Capacitance
Coss
185
260
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
15
30
pF
Turn-On Delay Time
td(on)
7
10
ns
Rise Time
tr
11
20
ns
Turn-Off Delay Time
td(off)
19
40
ns
Fall Time
(VDD = 200 V, ID = 6 A,
RG = 9.1 , VGS = 10 V) (Note 4)
tf
10
20
ns
Total Gate Charge
Qg
9.5
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
(VDS = 320V, ID = 6A
VGS = 10 V) (Note 4)
Qgd
3
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Qrr
1.6
µC
Forward Turn-On Time
ton
**
Reverse Recovery Time
IF = 6A, di/dt = 100A/µs , TJ = 25
(Note 4)
trr
270
ns
Diode Forward Voltage
IS = 6A, VGS = 0 V, TJ = 25
(Note 4)
VSD
1.5
V
Note
(1)
Repetitive rating; pulse width limited by max. junction temperature
(2)
VDD = 50V, starting TJ = 25
, L=24mH, RG = 25 , IAS = 4.5A
(3)
ISD
4.5A, di/dt
75A/µs, VDD
V(BR)DSS, TJ
150
(4)
Pulse Test: Pulse Width
300µs, Duty Cycle
2%
** Negligible, Dominated by circuit inductance
IRF730FP
6.0A 400V N CHANNEL POWER MOSFET



Html Pages

1 2 3


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com