MCT2, MCT2E

OPTOCOUPLERS

SOES023 – MARCH 1983 – REVISED OCTOBER 1995

2

POST OFFICE BOX 655303

electrical characteristics at 25

°C free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC = 10 µA,

IE = 0,

IF = 0

70

V

V(BR)CEO

Collector-emitter breakdown voltage

IC =1 mA,

IB = 0,

IF = 0

30

V

V(BRECO)

Emitter-collector breakdown voltage

IE = 100 µA,

IB = 0,

IF = 0

7

V

IR

Input diode static reverse current

VR = 3 V

10

µA

IC(on)

On-state collector current

Phototransistor

operation

VCE = 10 V,

IB = 0,

IF = 10 mA

2

5

mA

C(on)

Photodiode operation

VCB = 10 V,

IE = 0,

IF = 10 mA

20

µA

IC(off)

Off-state collector current

Phototransistor

operation

VCE = 10 V,

IB = 0,

IF = 0

1

50

nA

C(off)

Photodiode operation

VCB = 10 V,

IE = 0,

IF = 0

0.1

20

nA

HFE

Transistor static forward current transfer ratio

VCE = 5 V,

IC 100 µA

MCT2

250

HFE

Transistor static forward current transfer ratio

IC = 100 µA,

IF = 0

MCT2E

100

300

VF

Input diode static forward voltage

IF = 20 mA

1.25

1.5

V

VCE(sat)

Collector-emitter saturation voltage

IC = 2 mA,

IB = 0,

IF = 16 mA

0.25

4

V

rIO

Input-to-output internal resistance

Vin-out = ±1.5 kV for MCT2,

±3.55 kV for MCT2E,

See Note 4

1011

Ω

Cio

Input-to-output capacitance

Vin-out = 0,

See Note 4

f = 1 MHz,

1

pF

NOTE 4: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together.

switching characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tr

Rise time

Phototransistor operation

VCC = 10 V, IC(on) = 2 mA,

5

µs

tf

Fall time

Phototransistor operation

CC

,

RL = 100 Ω,

C(on)

,

See Test Circuit A of Figure 1

5

µs

tr

Rise time

Photodiode operation

VCC = 10 V, IC(on) 20 µA,

1

µs

tf

Fall time

Photodiode operation

CC

RL = 1 kΩ,

C(on)

µ

See Test Circuit B of Figure 1

1

µs