TIP32CM datasheet(1/1 Pages) FCI

部件名	TIP32CM

功能描述	Silicon epitaxial chip of p-n-p medium power transistor (Ic max=3A)

PDF	1 Pages

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制造商	FCI [First Components International]

网页	http://www.cotra.com.tw/

标志

1 / 1 page

General Description:

Silicon epitaxial chip of p-n-p medium power transistor (Ic max=3A)

used for general-purpose amplifier and switching application.

Complementary pair TIP31C

Recommended ultrasonic bonding wire Al

Emitter - 2 wire dia 80

µm

Base -

1 wire dia 80

µm

ELECTRICAL CHARACTERISTICS CHIPS ON WAFER

(Ta=25

°C)

Parameter

Symbol

Unit

Measurement Mode

Min

Max

Collector cutoff

Current

Iceo

mA

Vce=45V; Ib=0

0.3

Collector cutoff

Current

Ices

mA

Vce=60V; Ube=0

0.2

Emitter cutoff

Current

Iebo

mA

Veb=5,0 V; Ic=0

1.0

Collector – Emitter

Sustaining

Vceo

(sus)

V

Ic=30 mA, Ib=0

60

DC Current Gain(1) **

hFE

Vce=4V; Ic=1A

100

Small-Signal Current Gain **

hfe

Vce=10V; Ic=0,5 A

f=1kHz

20

Collector-Emitter

Saturation Voltage(1)

Vce(sat)

V

Ic=1A; Ib=35mA

0.5

Base- Emitter

On Voltage(1) **

Vbe(on)

V

Vce=4 V; Ic=3 A

1.8

1.Pulse Tests: Pulse Width

≤ 300

µs, Duty Cycle ≤ 2%

2.** In a circuit with common base Ucb= Uce-1v ; Ie=Ic

Wafer Diameter -- 100 mm

Wafer thickness -- 270

± 20 µm;

Die size

-- 1.7 x 1.7 mm ;

Metallization:

Top

-- Al 4.5

± 0.5 µm

Bottom

-- Ti-Ni-Ag

Ti = 0.1

± 0.02 µm

Ni = 0.5

± 0.1 µm

Ag = 0.6

± 0.1 µm

Bondpad size:

1. Base

0.4 x 0.3 mm

2.Emitter

0.312 x 0.312 mm

类似零件编号 - TIP32CM

制造商	部件名	数据表	功能描述
Mospec Semiconductor	TIP32C	192Kb / 4P	POWER TRANSISTORS(3A,40-100V,40W)
Motorola, Inc	TIP32C	196Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON
ON Semiconductor	TIP32C	196Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON REV 1
Power Innovations Ltd	TIP32C	86Kb / 6P	PNP SILICON POWER TRANSISTORS
STMicroelectronics	TIP32C	64Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS Oct-1999

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类似说明 - TIP32CM

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	2N5954	203Kb / 2P	Silicon N-P-N and P-N-P Medium-Power Transistors
	2N3998	175Kb / 2P	N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR
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