NTHD4P02F datasheet(2/8 Pages) ONSEMI

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NTHD4P02F

http://onsemi.com

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Units

Junction−to−Ambient (Note 1)

Steady State

T =25

°C

RqJA

110

°C/W

()

v 5 s

TJ = 25°C

qJA

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

−23

Zero Gate Voltage Drain Current

IDSS

VDS = −16 V, VGS = 0 V, TJ = 25°C

−1.0

DSS

VDS = −16 V, VGS = 0 V, TJ = 85°C

−5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±12 V

±100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.6

−0.75

−1.2

Drain−to−Source On− Resistance

RDS(on)

VGS = −4.5, ID = −2.2 A

0.130

0.155

DS(on)

VGS = −2.5, ID = −1.7 A

0.200

0.240

Forward Transconductance

gFS

VDS = −10 V, ID = −1.7 A

5.0

CHARGES AND CAPACITANCES

Input Capacitance

CISS

0V f

10MH

185

300

Output Capacitance

COSS

VGS = 0 V, f = 1.0 MHz,

VDS =−10 V

150

Reverse Transfer Capacitance

CRSS

VDS = −10 V

Total Gate Charge

QG(TOT)

3.0

6.0

Threshold Gate Charge

QG(TH)

VGS = −4.5 V, VDS = −10 V,

0.2

Gate−to−Source Charge

QGS

VGS = −4.5 V, VDS = −10 V,

ID = −2.2 A

0.5

Gate−to−Drain Charge

QGD

0.9

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

7.0

Rise Time

VGS = −4.5 V, VDD = −16 V,

Turn−Off Delay Time

td(OFF)

VGS = −4.5 V, VDD = −16 V,

ID = −2.2 A, RG = 2.5 W

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −2.1 A

−0.85

−1.15

Reverse Recovery Time

tRR

Charge Time

VGS = 0 V, IS = −2.1 A ,

Discharge Time

VGS = 0 V, IS = −2.1 A ,

dIS/dt = 100 A/ms

Reverse Recovery Charge

QRR

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Maximum Instantaneous Forward Voltage

IF = 0.1 A

0.425

IF = 0.5 A

0.480

IF = 1.0 A

0.510

0.575

Maximum Instantaneous Reverse Current

VR = 10 V

1.0

VR = 20 V

5.0

Maximum Voltage Rate of Change

dv/dt

VR = 20 V

10,000

V/ns

Non−Repetitive Peak Surge Current

IFSM

Halfwave, Single Pulse, 60 Hz

2. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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