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CLC423 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 CLC423
功能描述  Comlinear CLC423 94MHz, Single Supply Voltage Feedback Op Amp
PDF  8 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

CLC423 数据表(HTML) 2 Page - National Semiconductor (TI)

  CLC423 Datasheet HTML 1Page - National Semiconductor (TI) CLC423 Datasheet HTML 2Page - National Semiconductor (TI) CLC423 Datasheet HTML 3Page - National Semiconductor (TI) CLC423 Datasheet HTML 4Page - National Semiconductor (TI) CLC423 Datasheet HTML 5Page - National Semiconductor (TI) CLC423 Datasheet HTML 6Page - National Semiconductor (TI) CLC423 Datasheet HTML 7Page - National Semiconductor (TI) CLC423 Datasheet HTML 8Page - National Semiconductor (TI)  
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PARAMETERS
CONDITIONS
TYP
MIN/MAX RATINGS
UNITS
NOTES
CLC423AJ
25°
25°
0° to +70°
-40° to +85°
FREQUENCY DOMAIN RESPONSE
-3dB bandwidth
Vo < 1.0Vpp
48
32
28
27
MHz
B
-3dB bandwidth
Vo < 3.0Vpp
26
16
14
11
MHz
-3dB bandwidth AV = +1V/V
Vo < 1.0Vpp
94
MHz
rolloff
<10MHz
0.1
0.5
0.7
0.8
dB
B
peaking
DC to 200MHz
0
0.5
0.7
0.8
dB
B
linear phase deviation
<15MHz
0.3
0.6
0.8
0.9
deg
differential gain
NTSC, RL=150Ω
0.35
0.7
%
2
differential phase
NTSC, RL=150Ω
0.55
2
deg
2
TIME DOMAIN RESPONSE
rise and fall time
1V step
7.5
13
14
16
ns
settling time to 0.1%
1V step
46
70
ns
overshoot
1V step
5
13
%
slew rate
AV = +2
2V step
150
90
83
65
V/
µs
DISTORTION AND NOISE RESPONSE
2nd harmonic distortion
1Vpp, 1MHz
74
-dBc
1Vpp, 5MHz
62
55
52
52
-dBc
B
3rd harmonic distortion
1Vpp, 1MHz
94
-dBc
1Vpp, 5MHz
75
65
63
62
-dBc
B
equivalent input noise
voltage
>1MHz
10
12.5
13.6
14
nV/
√Hz
current
>1MHz
4
5
5.5
5.7
pA/
√Hz
STATIC DC PERFORMANCE
input offset voltage
2
7
8
10
mV
A
average drift
4
22
35
µV/˚C
input bias current
17
30
36
45
µAA
average drift
80
145
175
nA/˚C
input offset current
0.2
5
6
7.5
µA
average drift
10
22
27
nA/˚C
power supply rejection ratio
DC
82
65
64
60
dB
B
common-mode rejection ratio
DC
82
55
53
50
dB
supply current
no load
7
8.5
8.5
8.5
mA
A
MISCELLANEOUS PERFORMANCE
input capacitance
1
2
2
2
pF
input resistance
700
500
450
360
k
output impedance
@DC
0.07
0.15
0.24
0.7
input voltage range, high
3.7
3.45
3.25
3.15
V
input voltage range, low
0
0
0
0
V
output voltage range, high
RL = 150Ω
4.5
4.35
4.3
4.2
V
output voltage range, low
RL = 150Ω
0.35
0.5
0.5
0.55
V
output voltage range, high
no load
4.8
4.6
4.55
4.45
V
output voltage range, low
no load
0.45
0.65
0.7
0.75
V
output current
source
60
50
40
34
mA
output current
sink
36
20
16
10
mA
supply voltage, maximum
7
7
7
V
1
supply voltage, minimum
4
4
4
V
1
Electrical Characteristics (Vs = +5V1, Vcm = +2.5V, Av = +2, R
f = 250W, RL = 150W to GND; unless specified)
Absolute Maximum Ratings
supply voltage (Vs)
+7V
Iout is short circuit protected to ground
common-mode input voltage
VEE to VCC
maximum junction temperature
+175˚C
storage temperature range
-65˚C to +150˚C
lead temperature (soldering 10 sec)
+260˚C
differential input voltage
±2V
EDS tolerance (Note 3)
4000V
Notes
A) J-level: spec is 100% tested at 25°C, sample tested at 85°C.
B) J-level: spec is sample tested at 25°C.
1) Vs = VCC – VEE.
2) Tested with RL tied to +2.5V.
3) Human body model, 1.5k
Ω in series with 100pF.
Reliability Information
transistor count
62
MTBF
823Mhr
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.



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