ABSOLUTEMAXIMUMRATINGS

(25°C unless otherwise specified)

Storage Temperature

-55°C to +125°C

Operating Temperature

-30°C to +100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUTDIODE

Forward Current

50mA

Reverse Voltage

6V

Power Dissipation

70mW

OUTPUTTRANSISTOR

Collector-emitter Voltage BV

CEO

80V

Emitter-collector Voltage BV

ECO

6V

Collector Current

50mA

Power Dissipation

150mW

POWERDISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.2

1.4

V

I

Reverse Current (I

μAV

Output

Collector-emitter Breakdown (BV

V

I

Emitter-collector Breakdown (BV

V

I

Collector-emitter Dark Current (I

100

nA

V

Coupled

Current Transfer Ratio (CTR) (Note 2)

50

600

%

5mA I

GB

100

600

%

5mA I

BL

200

600

%

5mA I

A

80

160

%

5mA I

B

130

260

%

5mA I

C

200

400

%

5mA I

D

300

600

%

5mA I

Collector-emitter Saturation VoltageV

CE (SAT)

0.2

V

20mA I

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Output Rise Time tr

4

18

μsV

Output Fall Time tf

3

18

μsI

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

16/2/11

ELECTRICAL CHARACTERISTICS ( T

DB92275