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ASL563 数据表(PDF) 10 Page - Advanced Semiconductor Business Inc.

部件名 ASL563
功能描述  High Gain, Low Noise Amplifier
PDF  11 Pages
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制造商  ASB [Advanced Semiconductor Business Inc.]
网页  http://www.asb.co.kr
标志 ASB - Advanced Semiconductor Business Inc.

ASL563 数据表(HTML) 10 Page - Advanced Semiconductor Business Inc.

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ASB Inc.
 sales@asb.co.kr  Tel: +82-42-528-7225
February 2017
ASL563
High Gain, Low Noise Amplifier
1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1MHz.
Top
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Power Gain
Gp
F = 2.45 GHz
18.0
19.0
dB
Noise Figure
NF
F = 2.45 GHz
1.1
1.2
dB
Input Return Loss
RLin
F = 2.45 GHz
-18
dB
Output Return Loss
RLout
F = 2.45 GHz
-15
dB
1 dB Gain Compression
Output Power
Po(1dB)
F = 2.45 GHz
9
11
dBm
3rd Intercept Point
Output Power1)
OIP3
F = 2.45 GHz
13
15
dBm
Circuit Current
Id
F = 2.45 GHz,
Non-RF
16
mA
Schematic
S-parameters & Noise Figure
APPLICATION CIRCUIT
WLAN
2400 ~ 2500 MHz
+3 V, 16mA
Board Layout (FR4, 16x12 mm2, 0.8T)
Note: 1) the length of the strip line P1 and P2 are given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 0.45 mm, Width: 0.3 mm
*P2 Length: 0.3 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1 and P2
0
500
1000
1500
2000
2500
3000
3500
0
1
2
3
4
5
Frequency (MHz)
2100
2200
2300
2400
2500
2600
2700
2800
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Frequency (MHz)
S11
S22
freq (2.100GHz to 2.800GHz)
2100
2200
2300
2400
2500
2600
2700
2800
-40
-30
-20
-10
0
10
20
30
S12
S22
S11
S21
Frequency [MHz]
C1=1.5 pF
C5=1pF
VDD
RF OUT
ASL563
L1=3.3 nH
C3=10 nF
RF IN
L2=15 nH
C4=10 pF
C6=10 nF
L3=15 nH
L4=3.3 nH
R5=9.1 k
R1=8.2 k
C7=1
F
R3=33
R4=33
*P1
*P2
VDD
C2=1
F
R2=1.1
k
R6=820
7mm
Bottom



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